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| CMLM8205 MULTI DISCRETE MODULE TM SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete ModuleTM consisting of a single P-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOminiTM SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: C85 FEATURES: * Low rDS(on) Transistor (3.0 MAX @ VGS=5.0V) * Low VF Shottky Diode (0.47V MAX @ 0.5A) SYMBOL PD PD PD TJ, Tstg JA SYMBOL VDS VDG VGS ID IS IDM ISM SYMBOL VRRM IF IFRM IFSM 350 300 150 -65 to +150 357 50 50 20 280 280 1.5 1.5 40 500 3.5 10 UNITS mW mW mW C C/W UNITS V V V mA mA A A UNITS V mA A A UNITS nA A A mA V V SOT-563 CASE APPLICATIONS: * DC / DC Converters * Battery Powered Portable Equipment MAXIMUM RATINGS - CASE: (TA=25C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current MAXIMUM RATINGS - D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp1.0ms Peak Forward Surge Current, tp = 8.0ms ELECTRICAL CHARACTERISTICS - Q1: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=50V, VGS=0 1.0 IDSS VDS=50V, VGS=0, TJ=125C 500 ID(ON) VGS=10V, VDS=10V 50 BVDSS VGS=0, ID=10A 50 VGS(th) VDS=VGS, ID=250A 1.0 2.5 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R1 (20-January 2010) CMLM8205 MULTI DISCRETE MODULE TM SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL SYMBOL VDS(ON) VDS(ON) VSD rDS(ON) rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton, toff ELECTRICAL IR IR BVR VF VF VF VF VF CT CHARACTERISTICS - Q1 - Continued: TEST CONDITIONS MIN VGS=10V, ID=500mA VGS=5.0V, ID=50mA VGS=0, IS=115mA VGS=10V, ID=500mA VGS=10V, ID=500mA, TJ=125C VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TJ=125C VDS =10V, ID=200mA 200 VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA, RG=25, RL=150 CHARACTERISTICS - D1: (TA=25C) VR=10V VR=30V IR=500A IF=100A IF=1.0mA IF=10mA IF=100mA IF=500mA VR=1.0V, f=1.0MHz MAX 1.5 0.15 1.3 2.5 4.0 3.0 5.0 7.0 70 15 20 20 100 UNITS V V V mS pF pF pF ns A A V V V V V V pF 40 0.13 0.21 0.27 0.35 0.47 50 SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: C85 R1 (20-January 2010) w w w. c e n t r a l s e m i . c o m |
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